• 文献标题:   Measurement of the quantum capacitance of graphene
  • 文献类型:   Article
  • 作  者:   XIA JL, CHEN F, LI JH, TAO NJ
  • 作者关键词:  
  • 出版物名称:   NATURE NANOTECHNOLOGY
  • ISSN:   1748-3387 EI 1748-3395
  • 通讯作者地址:   Tsinghua Univ
  • 被引频次:   900
  • DOI:   10.1038/NNANO.2009.177
  • 出版年:   2009

▎ 摘  要

Graphene has received widespread attention due to its unique electronic properties(1-5). Much of the research conducted so far has focused on electron mobility, which is determined by scattering from charged impurities and other inhomogeneities(6,7). However, another important quantity, the quantum capacitance, has been largely overlooked. Here, we report a direct measurement of the quantum capacitance of graphene as a function of gate potential using a three-electrode electrochemical configuration. The quantum capacitance has a non-zero minimum at the Dirac point and a linear increase on both sides of the minimum with relatively small slopes. Our findings-which are not predicted by theory for ideal graphene-suggest that charged impurities also influences the quantum capacitance. We also measured the capacitance in aqueous solutions at different ionic concentrations, and our results strongly indicate that the long-standing puzzle about the interfacial capacitance in carbon-based electrodes has a quantum origin.