▎ 摘　　要

We explored the effect of MeV electron beam irradiation (MEBI) under ambient conditions on the growth of graphene by thermal chemical vapor deposition. X-ray photoelectron spectroscopy and Raman spectroscopy clearly revealed that the propagation of irradiation mediated-defects and oxidation on graphene transferred onto SiO2 (300 nm)/Si(001) occurred simultaneously after MEBI. In addition, a positive shift in the charge-neutral Dirac point (CNDP) and suppression of electrical conductivity near the CNDP were observed by electrical transport measurements, indicating p-type doping and the opening of a band-gap of graphene after MEBI. (C) 2013 The Japan Society of Applied Physics