▎ 摘　　要

Electronic devices comprising low-temperature processed 2D materials can be utilized in back-end-of-line nonvolatile memory and logic applications, to augment conventional silicon technology. A promising structure for a low-temperature processed digital nonvolatile flash memory device and/or logic device is the double-gate MoS2 FET with a graphene floating gate and a thin h-BN gate dielectric serving as a tunneling dielectric. In this work, we show that experimental hysteretic current-voltage characteristics of this digital flash memory device can be well fit by a simple and effective physics-based model using a WKB approximation to calculate the tunneling current to the graphene floating gate and a capacitive network with 2D density-of-states to calculate the channel current flowing in the MoS2 channel. Accordingly, the model allows a device designer to predict and/or tune characteristics for this memory device, e.g., the width and center-position of the hysteresis loop as well as the value of source-drain current, as a function of both the bottom (control) gate and top (FET) gate voltages. It is noted that shifting of the center-position of the hysteresis loop enables improved reliability and functionality of the memory device in circuit applications and is a unique feature of this double-gated MoS2 FET. Overall, the demonstrated ability to well model this memory device lends further credence that 2D devices could augment silicon technology. Published under an exclusive license by AIP Publishing.