• 文献标题:   Nanopatterned Graphene Field Effect Transistor Fabricated Using Block Co-polymer Lithography
  • 文献类型:   Article
  • 作  者:   CHOI D, KURU C, CHOI C, NOH K, HONG SK, DAS S, CHOI W, JIN S
  • 作者关键词:   graphene, multilayer graphene, block copolymer lithography, graphene nanopatterning, field effect transistor
  • 出版物名称:   MATERIALS RESEARCH LETTERS
  • ISSN:   2166-3831
  • 通讯作者地址:   Univ Calif
  • 被引频次:   8
  • DOI:   10.1080/21663831.2013.876676
  • 出版年:   2014

▎ 摘  要

We demonstrate a successful fabrication of Nanopatterned Graphene (NPG) using a PS-b-P4VP polymer, which was never used previously for the graphene patterning. The NPG exhibits homogeneous mesh structures with an average neck width of similar to 19 nm. Electronic characterization of single and few layers NPG FETs (field effect transistors) were performed at room temperature. We found that the sub-20 nm neck width creates a quantum confinement in NPG, which has led to a bandgap opening of similar to 0.08 eV. This work also demonstrates that BCP (block co-polymer) lithography is a pathway for low-cost, high throughput large-scale production of NPG with critical dimensions down to the nanometer regime.