• 文献标题:   Zone-boundary phonon induced mini band gap formation in graphene
  • 文献类型:   Article
  • 作  者:   KANDEMIR BS, MOGULKOC A
  • 作者关键词:   graphene, electronphonon interaction, band gap formation
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098 EI 1879-2766
  • 通讯作者地址:   Ankara Univ
  • 被引频次:   15
  • DOI:   10.1016/j.ssc.2013.09.012
  • 出版年:   2014

▎ 摘  要

We investigate the effect of electron-A(1g) phonon coupling on the gapless electronic band dispersion of the pristine graphene. The electron-phonon interaction is introduced through a Kekule-type distortion giving rise to inter-valley scattering between K and K' points in graphene. We develop a Frohlich type Hamiltonian within the continuum model in the long-wave length limit. By presenting a fully theoretical analysis, we show that the interaction of charge carriers with the highest frequency zone-boundary phonon mode of A(1g) symmetry induces a mini band gap at the corners of the two-dimensional Brillouin zone of the graphene in the THz region. Since electron-electron interactions favor this type of lattice distortion, it is expected to be enhanced, and thus its quantitative implications might be measurable in graphene. (C) 2013 Elsevier Ltd. All rights reserved.