▎ 摘　　要

Based on the influence of edge effect and channel shape, two new graphene nanoribbon filed effect transistors are presented being useful in high voltage and high sensitive optical applications. We fabricated and examined our devices under different conditions. It is seen that by choosing proper channel shape, ionization rate and breakdown voltage could be improved compared to normal rectangular device. We report nearly 11% and 19% improvements in breakdown voltage and ionization rate of graphene nanoribbon field effect transistors (GNRFET) respectively. At the end, in order to verify the experimental results using a proposed Monte Carlo simulation approach.