▎ 摘　　要

In this paper, the effect of interlayer voltage V on the bandgap and density of state (DOS) and carrier concentration is analysed using a new analytical approach. We begin by modelling of the DoS followed by carrier concentration as a function V. In addition, we model the carrier concentration in degenerate and non-degenerate regimes and the effect of V on them is studied. It is found that as V increases, carrier concentration and bandgap increase too. In addition, we realized that there is a saturation point in profile of bangap respect to V, which is calculated in this paper.