• 文献标题:   Unveiling conducting pathways embedded in strongly disordered graphene
  • 文献类型:   Article
  • 作  者:   YANG WY, WU BY, SHIH CJ, LO ST, LEE HY, CHEN TM, CHANG YH, CHEN YF, LIANG CT
  • 作者关键词:   graphene, cvd, hopping
  • 出版物名称:   SEMICONDUCTOR SCIENCE TECHNOLOGY
  • ISSN:   0268-1242 EI 1361-6641
  • 通讯作者地址:   Natl Cheng Kung Univ
  • 被引频次:   1
  • DOI:   10.1088/0268-1242/31/11/115001
  • 出版年:   2016

▎ 摘  要

Graphene shows very different electrical properties under the influence of electrical environments. For example, pristine graphene can show either insulating or. normally metallic behavior when supported by different substrates. Here we study charge transport in disordered graphene grown by chemical vapor deposition with varying channel widths. We demonstrate that at high temperatures homogeneous hopping governs the electrical characteristics, whereas at low enough temperatures where charge hopping is frozen out carriers through the embedded weakly disordered conducting pathways contribute a finite conductance instead of being strongly insulating. Our work not only reveals their inhomogeneous features but also provides a new approach for characterizing the surface disorder in large-area graphene systems.