▎ 摘　　要

Graphene grown by chemical vapor deposition method has seen success over the years and offers a tantalizing opportunity to provide large-area graphene for various electronic devices. The use of graphene for electronic devices has led to a revolution in device capability, with graphene-based devices continuing to push the bounds of what is possible. Graphene based electronic devices enjoy widespread research interest due to graphene's superior innate properties and have the potential to dominate several device fields. Since graphene is typically grown on metallic substrates, this has required the development of transfer methods. These transfer methods seek to offer ultraclean, and ultra-flat transferred graphene. An improvement to future graphene devices can be expected by the completion of this goal. This is due to the removal of defects and contaminants that deteriorate the properties of graphene. In one case, the number of 2.5um or larger residue particles in a 650 x 500 um(2) area was reduced from similar to 190 to <10. While many investigations have been performed with this goal, ultrahigh quality graphene transfer has yet to be shown. In this review, recent advancements in graphene transfer technology are highlighted. The different methods, categorized as wet, dry, or other, are investigated with respect to their process steps and different improvements on each step are discussed. Limitations and opportunities to continue the advancement of graphene transfer technology are explained.