• 文献标题:   Delocalized electrochemical exfoliation toward high-throughput fabrication of high-quality graphene
  • 文献类型:   Article
  • 作  者:   ZHANG PL, HE P, YU QK, WANG G, HUANG T, YANG SW, LIU Z, XIE XM, DING GQ
  • 作者关键词:   highly crystalline graphene, exfoliation mechanism, electron transfer in electrolyte, high conductivity, orientation modulation
  • 出版物名称:   CHEMICAL ENGINEERING JOURNAL
  • ISSN:   1385-8947 EI 1873-3212
  • 通讯作者地址:  
  • 被引频次:   11
  • DOI:   10.1016/j.cej.2021.131122 EA JUL 2021
  • 出版年:   2022

▎ 摘  要

Many of graphene's industrial applications such as electromagnetic interference (EMI) shielding demand efficient fabrication of high-quality graphene in large scale. Existing electrochemical exfoliation is a trade-off but never an ideal solution in this regard. Herein, we propose a delocalized electrochemical exfoliation (DEE) strategy to revolutionize the way graphite is electrochemically exfoliated. By transmitting the electric potentials with electron transfer reactions, the electrochemical exfoliation is firstly delocalized from electrode/electrolyte interfaces to the whole electrolyte system, thus making deep yet non-destructive exfoliation possible for every dispersed graphite particle. The as-prepared DEE-graphene possesses an ultralow defect density (-1.3 x 1010 cm-2) and significantly high carbon-to-oxygen ratio (-28). Remarkably, record high yields (greater than 98%, 1-10 layers) and production rates (-72.7 g h-1) are achieved in up-scaled DEE in a reproducible manner. More importantly, processing this high-quality graphene into membranes with optimal orientation brings a superior EMI shielding performance (1.9 x 105 dB cm2 g-1) outperforming the best membranes fabricated from metals and many other 2-D materials including reduced graphene oxide and MXenes. The highly efficient DEE with a fundamentally different mechanism and the effective orientation angle modulation strategy for EMI shielding would inspire research and applications of graphene and other two-dimensional materials.