▎ 摘　　要

The resistive random access memory with a graphene electrode (GE) is carefully modeled and simulated by considering its geometrical and physical properties. Since the graphene oxide is generated through the migration of oxygen ions from metal oxide to GE affecting current transport in the memory cell, the model of its electrical conductivity with different oxidation degrees is developed, in which the conductivity is exponentially dependent on the oxidation degree. The simulated I-V characteristics, which agree well with those of the experiment, are obtained by self-consistently solving the current transport, heat conduction, and oxygen vacancy migration equations. Based on the simulation, oxygen vacancy density, temperature distribution, and resistances of high- and low-resistance states are extracted and compared. A low-temperature increase due to low power consumption indicates its great potential for high-density integration.