▎ 摘　　要

A novel multilevel resistive switching was observed in trilayer stacked geometry composed of graphene nano flakes sandwiched between polyvinylidene fluoride layers fabricated by spin coating method, which are expected to fulfill the need of high density data storage memories. External parameters such as current compliance and induced voltage pulse imposed on the devices provided an aid to tune the inherent resistance states. As fabricated devices exhibited multi level switching with stable resistance ratios between different resistance states having excellent data retention and endurance. Space charge limited conduction and Fowler-Nordheim (F-N) tunneling were found to be responsible for the switching mechanism. Graphene enriched with trapping sites provides the adequate environment for F-N tunneling process to occur, resulting in multi-bit resistance states. (C) 2014 Elsevier Ltd. All rights reserved.