• 文献标题:   Valley polarized insulator-metal transition and valley filtering effect in graphene
  • 文献类型:   Article
  • 作  者:   CAO J, XIONG SJ
  • 作者关键词:  
  • 出版物名称:   EUROPEAN PHYSICAL JOURNAL B
  • ISSN:   1434-6028 EI 1434-6036
  • 通讯作者地址:   Hohai Univ
  • 被引频次:   0
  • DOI:   10.1140/epjb/e2015-50732-3
  • 出版年:   2015

▎ 摘  要

We investigate the properties of a graphene system taking into account both the on-site Coulomb repulsion and the Rashba spin-orbit coupling caused by a transverse electric field by using a mean-field approximation of the Hubbard model. It is found that by increasing the strength of the Rashba spin-orbit coupling, the system with a strong Coulomb interaction can successively go through three phases: valley polarized insulator, valley polarized metal, and normal metal, in which the first two phases are new ones characterized by their specific band structures. Hence, a valley polarized insulator-metal phase transition can occur by changing the strength of the spin-orbit coupling in this system. We propose a mechanism of valley filter based on the gated valley polarized insulator, in which a net K or K' valley current can be obtained.