• 文献标题:   Band structure and extra Dirac points in the energy spectrum of ABA-Trilayer graphene superlattice
  • 文献类型:   Article
  • 作  者:   AHMAD T, ULLAH K, RASHID AU, UDDIN S
  • 作者关键词:   graphene, superlattice, nanostructure, electronic propertie, periodic potential
  • 出版物名称:   PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES
  • ISSN:   1386-9477 EI 1873-1759
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1016/j.physe.2023.115669 EA FEB 2023
  • 出版年:   2023

▎ 摘  要

We have investigated the band structure of ABA trilayer graphene in a one-dimensional superlattice formed by a periodic Kronig-Penny type of potential with periodic sequence of alternating barriers. The dispersion relation of ABA trilayer graphene is a combination of linear band of single layer and the quadratic dispersion of bilayer graphene. We have considered two different cases; first by assuming that all the three layers have the same potential with equal barrier and well widths. When the barrier height of the superlattice potential is increased, extra Dirac points with same electron-hole crossing energy as that of the original Dirac points are generated. The generation of extra Dirac points occurs only in the linear dispersion while the quadratic dispersion gets separated about zero energy level. Extra Dirac points are generated not only from the original Dirac points but also from the valleys formed in the energy spectrum. For unequal barrier and well width, extra Dirac points are generated with broken symmetry of the electron-hole crossing energy. Next, we considered the case when all the three layers have different potentials with equal barrier and well widths. We found that by increasing the barrier height of the superlattice potential; both the linear and the parabolic bands contribute towards the generation of extra Dirac points. Two extra Dirac points are generated by increasing the barrier height by a factor of 4 pi alpha PLANCK CONSTANT OVER TWO PIvF L+W , where alpha is a positive integer. These fascinating results may be helpful in exploring the electronic properties while designing ABA-trilayer graphene-based devices.