• 文献标题:   Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process
  • 文献类型:   Article
  • 作  者:   NATH A, KOEHLER AD, JERNIGAN GG, WHEELER VD, HITE JK, HERNANDEZ SC, ROBINSON ZR, GARCES NY, MYERSWARD RL, EDDY CR, GASKILL DK, RAO MV
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   George Mason Univ
  • 被引频次:   23
  • DOI:   10.1063/1.4880937
  • 出版年:   2014

▎ 摘  要

It is well-known that the performance of graphene electronic devices is often limited by extrinsic scattering related to resist residue from transfer, lithography, and other processes. Here, we report a polymer-assisted fabrication procedure that produces a clean graphene surface following device fabrication by a standard lithography process. The effectiveness of this improved lithography process is demonstrated by examining the temperature dependence of epitaxial graphene-metal contact resistance using the transfer length method for Ti/Au (10 nm/50 nm) metallization. The Landauer-Buttiker model was used to explain carrier transport at the graphene-metal interface as a function of temperature. At room temperature, a contact resistance of 140 Omega-mu m was obtained after a thermal anneal at 523K for 2 hr under vacuum, which is comparable to state-of-the-art values. (C) 2014 AIP Publishing LLC.