▎ 摘　　要

Graphene, grown by chemical vapor deposition, is transferred onto Nb-doped SrTiO3(001) surface and the interface properties are characterized by scanning tunneling microscopy and photoemission spectroscopy. Charge doping of graphene changes from n- to p-type with vacuum annealing and correspondingly opposite space charge regions are observed in SrTiO3 substrate. Formation of an ordered surface reconstruction of the SrTiO3 substrate underneath the graphene is observed. The surface restructuring can be measured in scanning tunneling microscopy because the graphene closely follows to the substrate topography. This causes at the atomic-level a wavy graphene morphology on the SrTiO3 (001)-c(6 x 2) surface reconstruction. Prolonged high temperature (above 700 degrees C) vacuum annealing causes formation of hexagonal holes with 'armchair' edges in the graphene and an eventual disappearance of the graphene. Etching of the graphene is assumed to be caused by reaction with released substrate oxygen.