▎ 摘　　要

We studied the electron doping of bilayer graphene (BLG) on hexagonal boron nitride (h-BN) by dissociative H-2 adsorption. Charge transfer phenomena were investigated by the gate voltage (V-g)-dependent electrical conductivity sigma(V-g) and Raman spectroscopy with respect to the H-2 exposure. The shift of the charge neutrality point toward the negative V-g region was observed and the charge scattering mechanism was found with the variation of sigma(V-g). The charge transfer at the interface as well as the lattice distortion of BLG due to hydrogenation were verified by Raman spectroscopy. From these results, we concluded that the electron doping and short-range scattering in the BLG exposed to high H-2 pressure (11 bar) are intrinsic features, which were achieved using a van der Waals interface consisting of BLG and h-BN.