• 文献标题:   Threefold atmospheric-pressure annealing for suppressing graphene nucleation on copper in chemical vapor deposition
  • 文献类型:   Article
  • 作  者:   SUZUKI S, NAGAMORI T, MATSUOKA Y, YOSHIMURA M
  • 作者关键词:  
  • 出版物名称:   JAPANESE JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-4922 EI 1347-4065
  • 通讯作者地址:   Toyota Technol Inst
  • 被引频次:   11
  • DOI:   10.7567/JJAP.53.095101
  • 出版年:   2014

▎ 摘  要

Chemical vapor deposition (CVD) is a promising method of producing a large single-crystal graphene on a catalyst, especially on copper (Cu), and a further increase in domain size is desirable for electro/optic applications. Here, we report on threefold atmospheric-pressure (ATM) annealing for suppressing graphene nucleation in atmospheric CVD. Threefold ATM annealing formed a step and terrace surface of the underlying Cu, in contrast to ATM annealing. Atomic force microscopy and Auger electron mapping revealed that Si-containing particles existed on threefold-ATM- and ATM-annealed surfaces; particles on Cu had a lower density after threefold ATM annealing than after ATM annealing. The formation of a step and terrace surface and the lower density of particles following the threefold ATM annealing would play a role in reducing graphene nucleation. By combining threefold ATM annealing and electropolishing of Cu, the nucleation of graphene was effectively suppressed, and a submillimeter-sized hexagonal single-crystal graphene was successfully obtained. (C) 2014 The Japan Society of Applied Physics