▎ 摘　　要

Graphene films prepared by heating the SiC(000 (1) over bar) surface (the C-face of the {0001} surfaces) in a vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former yields a well known 3 x 3 reconstructed interface, whereas the latter produces an interface with root 43 x root 43-R +/- 7.6 degrees symmetry. This structure is shown to contain a graphene-like layer with properties similar to the 6 root 3 x 6 root 3-R30 degrees "buffer layer" that forms on the Si(0001) surface (the Si-face).