• 文献标题:   Interface Engineering for CVD Graphene: Current Status and Progress
  • 文献类型:   Article
  • 作  者:   WAN X, CHEN K, XU JB
  • 作者关键词:   graphene, graphene growth, graphene transfer, substrate, interface engineering
  • 出版物名称:   SMALL
  • ISSN:   1613-6810 EI 1613-6829
  • 通讯作者地址:   Chinese Univ Hong Kong
  • 被引频次:   18
  • DOI:   10.1002/smll.201401458
  • 出版年:   2014

▎ 摘  要

In the past decade, graphene and graphene-like 2D materials have drawn more and more attention in both academia and industry due to their fascinating properties. As an atomically thin 2D layered material, graphene has extremely high environmental susceptibility, that is, its properties are strongly affected by its surroundings. In this review, the current status and progress in graphene interface engineering are systematically discussed, including the interface between graphene (carbon sources) and an underlying growth substrate (catalyst), the interface between graphene and a supporting layer during a transfer process, as well as the interface between graphene and a modified substrate from the viewpoint of device applications. These key techniques involved in graphene synthesis, transfer, and device substrates can be further applied to other related 2D layered materials such as MoS2. Moreover, by combining 2D crystals in one particular stack, 2D-based heterostructures with desired functionalities can be achieved, which opens up a new avenue for the future applications of 2D layered materials.