• 文献标题:   Moire patterns and step edges on few-layer graphene grown on nickel films
  • 文献类型:   Article
  • 作  者:   KE F, YIN XL, TONG N, LIN CF, LIU N, ZHAO RG, FU L, LIU ZF, HU ZH
  • 作者关键词:   scanning tunneling microscopy, fewlayer graphene, stacking order, step edge
  • 出版物名称:   CHINESE PHYSICS B
  • ISSN:   1674-1056 EI 1741-4199
  • 通讯作者地址:   Peking Univ
  • 被引频次:   3
  • DOI:   10.1088/1674-1056/23/11/116801
  • 出版年:   2014

▎ 摘  要

Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moire patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moire patterns while both sublattices are seen in regions with moire pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.