▎ 摘　　要

Nowadays, carbon-based materials like graphene and its derivatives consume great nano-technological applications worldwide. Graphene, due to its attractive properties such as its unusual charge transport, mechanical and thermal capabilities, is in the nano-scaling research spotlight. Additionally, to overcome the scaling limitations of large-scale charge-storage-based memories, the Memristor is focused upon as a nonvolatile memory. In the present work, the modeling of a Memristor based on graphene oxide as an active layer is considered. The drift-diffusion formalism as an electron transport mechanism, derived from ion immigration, is explored. It is concluded that by increasing the voltage between two metalelectrodes, the carrier concentration is increased, and the carrier mobility on the sandwiched layer (graphene oxide) is decreased. The conductive path by the redox of graphene oxide (GO) atoms, due to the conversion of sp(3) to sp(2) oxygen functionalities, is formed, which can be modeled by degenerate mode (the low resistance switching or ON state). This path is ruptured by decreasing the voltage into the reset voltage, which is modeled by the non-degenerate mode (the high resistance switching or OFF state). Finally, the model in comparison with the experimental data numerically is simulated, and acceptable results for metal and graphene-like path formation are observed. (C) 2020 The Authors. Published by Elsevier B.V. on behalf of Faculty of Engineering, Ain Shams University.