▎ 摘　　要

The effect of reaction temperature on the synthesis of graphitic thin film on nickel substrate was investigated in the range of 400A degrees C to 1,000A degrees C. Amorphous carbon (a-C) film was obtained at 400A degrees C on nickel foils by chemical vapor deposition; hybrid films of multilayer graphene (MLG) and a-C were synthesized at a temperature of 600A degrees C, while MLG was obtained at temperatures in excess of 800A degrees C. Schottky-junction solar cell devices prepared using films produced at 400A degrees C, 600A degrees C, 800A degrees C, and 1,000A degrees C coupled with n-type Si demonstrate power conversion efficiencies of 0.003%, 0.256%, 0.391%, and 0.586%, respectively. A HNO3 treatment has further improved the efficiencies of the corresponding devices to 0.004%, 1.080%, 0.800%, and 0.820%, respectively. These films are promising materials for application in low-cost and simple carbon-based solar cells.