▎ 摘　　要

Herein, we propose an in-situ fabrication method to prepare S-doped graphene sensor integrated with micro-hotplatform (MHP). During the fabrication process, the graphene is transfeauthorrred only one time and sulfur is in-situ doped in graphene at 500 degrees C. The as-prepared sulfur doped graphene (SG) sensors are sensitive to NO2 with large range from 500 ppt to 100 ppm at room temperature (RT). With the help of heater integrated in MHP, the SG sensors could quickly recover to the baseline within 5 min. Furthermore, the SG sensors exhibit excellent selectivity for NO2 which is essential for practical applications. (C) 2017 Elsevier B.V. All rights reserved.