• 文献标题:   Al doped graphene: A promising material for hydrogen storage at room temperature
  • 文献类型:   Article
  • 作  者:   AO ZM, JIANG Q, ZHANG RQ, TAN TT, LI S
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   Jilin Univ
  • 被引频次:   121
  • DOI:   10.1063/1.3103327
  • 出版年:   2009

▎ 摘  要

A promising material for hydrogen storage at room temperature-Al doped graphene is proposed theoretically by using density functional theory calculation. Hydrogen storage capacity of 5.13 wt % is predicted at T=300 K and P=0.1 GPa with an adsorption energy E-b=-0.260 eV/H-2. This is close to the target specified by U. S. Department of Energy with a storage capacity of 6 wt % and a binding energy of -0.2 to -0.4 eV/H-2 at ambient temperature and modest pressure for commercial applications. It is believed that the doped Al alters the electronic structures of both C and H-2. The bands of H-2 overlapping with those of Al and C simultaneously are the underlying mechanism of hydrogen storage capacity enhancement. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3103327]