• 文献标题:   Silicene Passivation by Few-Layer Graphene
  • 文献类型:   Article
  • 作  者:   RITTER V, GENSER J, NAZZARI D, BETHGE O, BERTAGNOLLI E, LUGSTEIN A
  • 作者关键词:   silicene, graphene, passivation, raman spectroscopy, 2d material
  • 出版物名称:   ACS APPLIED MATERIALS INTERFACES
  • ISSN:   1944-8244 EI 1944-8252
  • 通讯作者地址:   Tech Univ Wien
  • 被引频次:   4
  • DOI:   10.1021/acsami.8b20751
  • 出版年:   2019

▎ 摘  要

The stabilization of silicene at ambient conditions is essential for its characterization, future processing, and device integration. Here, we demonstrate in situ encapsulation of silicene on Ag(111) by exfoliated few layer graphene (FLG) flakes, allowing subsequent Raman analysis under ambient conditions. Raman spectroscopy measurements proved that FLG capping serves as an effective passivation, preventing degradation of silicene for up to 48 h. The acquired data are consistent with former in situ Raman measurements, showing two characteristic peaks, located at 216 and 515 cm(-1). Polarization-dependent measurements allowed to identify the two modes as A and E, demonstrating that the symmetry properties of silicene are unaltered by the capping process.