• 文献标题:   Energy band engineering via "Bite" defect located on N=8 armchair graphene nanoribbons
  • 文献类型:   Article
  • 作  者:   SUN SJ, GUAN YR, HAO ZL, RUAN ZL, ZHANG H, LU JC, GAO L, ZUO XQ, CAI JM
  • 作者关键词:   graphene nanoribbons gnrs, scanning tunneling spectroscopy sts, noncontact atomic force microscopy ncafm, density functional theory dft, energy band regulation
  • 出版物名称:   NANO RESEARCH
  • ISSN:   1998-0124 EI 1998-0000
  • 通讯作者地址:  
  • 被引频次:   8
  • DOI:   10.1007/s12274-021-3539-0 EA JUL 2021
  • 出版年:   2022

▎ 摘  要

Graphene nanoribbons (GNRs) not only share many superlative properties of graphene but also display an exceptional degree of tunability of their electronic properties. The bandgaps of GNRs depend greatly on their widths, edges, etc. Herein, we report the synthesis path and the physical properties of atomic accuracy staggered narrow N = 8 armchair graphene nanoribbons (sn-8AGNR) with alternating "Bite" defects on the opposite side. The intermediate structures in the surface physicochemical reactions from the precursors to the sn-8AGNR are characterized by scanning tunneling microscopy. The electronic properties of the sn-8AGNR are characterized by scanning tunneling spectroscopies and d//dV mappings. Compared with the perfect N = 8 armchair graphene nanoribbons (8AGNR), the sn-8AGNR has a larger bandgap, indicating that the "Bite" edges can effectively regulate the electronic structures of GNRs.