▎ 摘　　要

The frequency dependence of thermoelectric properties of doped biased bilayer graphene are investigated using the Green's function approach in the context of tight-binding model. We find that the thermoelectric figure of merit (ZT) can be remarkably enhanced by electronic chemical potential, temperature, bias voltage and frequency. The electronic contribution to thermal conductivity of doped materials is dominant and therefore we have considered this contribution. The improvement due to the combined increase in the Seebeck coefficient and the reduction in the thermal conductivity outweighing the decrease in the electrical conductance is studied. We have found a good if value for normal conditions in the lab, i.e, for room temperature (RT), high bias voltages and low frequencies. We have found the temperature dependence of ZT for different values of frequency, bias voltage and chemical potential. Also the dependence of ZT on the chemical potential and bias voltage has been investigated in details. The calculated ZT values qualify bilayer graphene as a very promising material for thermoelectric applications. (C) 2015 Elsevier Ltd. All rights reserved.