▎ 摘　　要

Vertical graphene, which belongs to nanomaterials, is a very promising tool for improving the useful properties of long-used and proven materials. Since the growth of vertical graphene is different on each base material and has specific deposition setting parameters, it is necessary to examine each base material separately. For this reason, a full factor design of experiment was performed with 2(6) = 64 rounds, which contained additional 5 central points, i.e., a total of 69 rounds of individual experiments, which was to examine the effect of input factors Temperature, Pressure, Flow, CH4, Plasma Power, and Annealing in H-2 on the growth of vertical graphene on aluminum alloy AlCu4Mg. The deposition was performed using plasma-enhanced chemical vapor deposition (PECVD) technology. Mainly, the occurrence of graphene was analyzed, which was confirmed by Raman spectroscopy, as well as its thickness. The characterization was performed using electron and transmission microscopy, including an atomic force microscope. It was found that the growth of graphene occurred in 7 cases and its thickness is affected only by the interaction flow (sccm) x pretreatment H-2 (sccm).