• 文献标题:   Highly Sensitive pH Sensors of Extended-Gate Field-Effect Transistor With the OxygenFunctionalized Reduced Graphene Oxide Films on Reverse Pyramid Substrates
  • 文献类型:   Article
  • 作  者:   LI YR, CHANG SH, TSAI WL, CHANG CT, WANG KY, YANG PY, CHENG HC
  • 作者关键词:   extendedgate fieldeffect transistors egfets, graphene, ph sensor
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106 EI 1558-0563
  • 通讯作者地址:   Natl Chiao Tung Univ
  • 被引频次:   1
  • DOI:   10.1109/LED.2015.2477851
  • 出版年:   2015

▎ 摘  要

The oxygen-plasma-treated reduced graphene oxide films (OPT-RGOFs) as the pH sensing membranes for the extended-gate field-effect transistors were demonstrated to achieve the higher pH sensitivity of 52 mV/pH and better linearity of 0.996 in a wide sensing range of pH 1-13 than those without plasma treatment. It was attributed to the oxygen-containing functional groups on the RGOF induced from the plasma treatment. In addition, the OPT-RGOFs sprayed on the reverse pyramid substrates were also proposed to further enhance the sensing sites, leading to a superior pH sensitivity of 57 mV/pH with an excellent linearity of 0.996.