• 文献标题:   Etched graphene quantum dots on hexagonal boron nitride
  • 文献类型:   Article
  • 作  者:   ENGELS S, EPPING A, VOLK C, KORTE S, VOIGTLANDER B, WATANABE K, TANIGUCHI T, TRELLENKAMP S, STAMPFER C
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Rhein Westfal TH Aachen
  • 被引频次:   26
  • DOI:   10.1063/1.4818627
  • 出版年:   2013

▎ 摘  要

We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN. (C) 2013 AIP Publishing LLC.