▎ 摘　　要

The junction of impact ionization and avalanche transit time (IMPATT) diodes generally operates at a higher temperature than ambient temperature. Therefore, the junction experiences a considerable increase in heat, which eventually transfers to the whole diode structure. As a result, the diode may suffer from burnout more quickly, implying lower life expectancy of the IMPATT diode. Thus, this diode must be modeled and analyzed thermally in order to reduce the risk of thermal failure. The performance of graphene-based heat sink is reported here for the double-drift region IMPATT structure. It was observed that graphene-based heat sink has better thermal performance as compared to that of diamond-based heat sink. In graphene-based heat sink, the reduction in thermal resistance compared to diamond varies from 12.07% at 150 K to 93.59% at 800 K.