▎ 摘　　要

Two dimensional (2D) materials based heterostructures have gained profound interest in optoelectronics and electronic technology due to additional functionalities over the individual structures. This study demonstrates the fabrication and characterization of van der Waal heterostructure by selective coverage of graphene (Gr) with tungsten disulfide (WS2). The electrical transport measurements divulge the tweaking of charge carriers in graphene after WS2 coverage. Such architecture provides route towards the formation of heterojunction within graphene FET based on surface charge transfer between Gr/WS2 heterointerface. Furthermore, the exposure of device towards deep ultraviolet light (DUV) enhances the charge transfer mechanism and as a result more pronounced junction is observed. The photoelectrical characterization of heterostructure is also investigated by calculating detectivity (D-star), external quantum efficiency (EQE) photoresponsivity (R-lambda). Our results suggest that 2D heterostructures in combination with DUV irradiations are more efficient and suitable choice to selectively tune the properties of 2D material-based optoelectronic devices.