• 文献标题:   Impact of Intercalation Doping on the Conductivity of Multi-Layer Graphene Nanoribbon (MLGNR) in On-Chip Interconnects
  • 文献类型:   Article
  • 作  者:   SHARMA H, SANDHA KS
  • 作者关键词:   fermi energy, esc, multilayer graphene nanoribbon mlgnr, signal delay, pdp
  • 出版物名称:   JOURNAL OF CIRCUITS SYSTEMS COMPUTERS
  • ISSN:   0218-1266 EI 1793-6454
  • 通讯作者地址:   Thapar Inst Engn Technol Deemed Be Univ
  • 被引频次:   1
  • DOI:   10.1142/S0218126620501856
  • 出版年:   2020

▎ 摘  要

Graphene nanoribbons are considered potentially suitable and have exhibited excellent results in on-chip interconnects. In order to evaluate the different circuit impedance parameters of multi-layer graphene nanoribbons (MLGNRs), an electrical equivalent single conductor (ESC) along with an analytical model is proposed. On the basis of an electrical model, the impact of intercalation doping on the performance of MLGNRs at 32, 22, and 16 nm technology nodes is discussed in this paper. Moreover, it is also discussed that the increase in intercalation doping increases the Fermi energy of the layers of the MLGNR, which increases its overall conductivity. The fact that the variation in the Fermi energy will have a considerable impact on the parasitic parameters of the MLGNR interconnect at three different technology nodes (32, 22, and 16 nm) for variable global lengths (500-2000 mu m) is also analyzed. To estimate and compare the performance in terms of delay and power delay product (PDP) of MLGNRs, the simulation program with integrated circuit emphasis (SPICE) simulation tool is used. The results also show that the increase in the Fermi energy improves the performance of MLGNRs in terms of delay and PDP at three different technology nodes. Furthermore, a comparative analysis of all three technology nodes is performed with the copper interconnect, and it is revealed that the MLGNR interconnect is considered to be a prominent material for the next-generation on-chip very-large-scale integration interconnects.