• 文献标题:   Effects of charge transfer interaction of graphene with electron donor and acceptor molecules examined using Raman spectroscopy and cognate techniques
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   VOGGU R, DAS B, ROUT CS, RAO CNR
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984
  • 通讯作者地址:   Jawaharlal Nehru Ctr Adv Sci Res
  • 被引频次:   154
  • DOI:   10.1088/0953-8984/20/47/472204
  • 出版年:   2008

▎ 摘  要

The effects of the interaction of few-layer graphene with electron donor and acceptor molecules have been investigated by employing Raman spectroscopy, and the results compared with those from electrochemical doping. The G-band softens progressively with increasing concentration of tetrathiafulvalene (TTF) which is an electron donor, while the band stiffens with increasing concentration of tetracyanoethylene (TCNE) which is an electron acceptor. Interaction with both TTF and TCNE broadens the G-band. Hole and electron doping by electrochemical means, however, stiffen and sharpen the G-band. The 2D-band position is also affected by interaction with TTF and TCNE. More importantly, the intensity of the 2D-band decreases markedly with the concentration of either. The ratio of intensities of the 2D-band and G-band decreases with an increase in TTF or TCNE concentration, and provides a means for carrier titration in the charge transfer system. Unlike the intensity of the 2D-band, that of the D-band increases on interaction with TTF or TCNE. All of these effects occur due to molecular charge transfer, also evidenced by the occurrence of charge transfer bands in the electronic absorption spectra. The electrical resistivity of graphene varies in opposite directions on interaction with TTF and TCNE, the resistivity depending on the concentration of either compound.