• 文献标题:   Giant quantized Goos-Hanchen effect on the surface of graphene in the quantum Hall regime
  • 文献类型:   Article
  • 作  者:   WU WJ, CHEN SZ, MI CQ, ZHANG WS, LUO HL, WEN SC
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW A
  • ISSN:   2469-9926 EI 2469-9934
  • 通讯作者地址:   Hunan Univ
  • 被引频次:   16
  • DOI:   10.1103/PhysRevA.96.043814
  • 出版年:   2017

▎ 摘  要

We theoretically predict a giant quantized Goos-Hanchen (GH) effect on the surface of graphene in the quantum Hall regime. The giant quantized GH effect manifests itself as an angular shift whose quantized step reaches the order of mrad for light beams impinging on a graphene-on-substrate system. The quantized GH effect can be attributed to quantized Hall conductivity, which corresponds to the discrete Landau levels in the quantum Hall regime. We find that the quantized step can be greatly enhanced for incident angles near the Brewster angle. Moreover, the Brewster angle is sensitive to the Hall conductivity, and therefore the quantized GH effect can be modulated by the Fermi energy and the external magnetic field. The giant quantized GH effect offers a convenient way to determine the quantized Hall conductivity and the discrete Landau levels by a direct optical measurement.