▎ 摘　　要

Reduced graphene oxide/gallium nitride (RGO-GaN) nanocomposites were synthesized by a facile single-step chemical reduction process with variation in the concentration of GaN from GaN1%@RGO-GaN to GaN20% @RGO-GaN. Scanning electron microscopy and X-ray diffraction results revealed that the particle sizes of the GaN nanoparticles,and the crystallite sizes of RGO-GaN nanocomposites, were in the ranges of178-379 and 0.243-0.245 nm, respectively. The Gaussian deconvolution of Ga(3s), N(1s), and Ga(2p) for GaN1%@RGO-GaN and GaN7%@RGO-GaN indicated various binding energies of core orbital electronic configuration for the GaN in the RGO-GaN nanocomposite networks. The X-ray photoelectron spectroscopy measurements showed the calculated atomic percentage of Ga and N for GaN1%@RGO-GaN and GaN7%@RGO-GaN ranged within 2.32-5.98% and 4.91-7.33%, respectively. The maximum specific capacitance was for GaN5%@RGO-GaN-with454 F/g at 10 mV/s scan rate as measured using cyclic voltammetry. Similar results were found using the galvanostatic charge-discharge method, resulting in specific capacitance of 116.8-146.1 F/g at a current density of 1A/g. Moreover, very low charge transfer resistance was developed, reaching a maximum of only 2.36 Omega for electrochemical impedance spectroscopy analysis. These electrochemical measurement results indicated good capacitive behavior of the RGO-GaN nanocomposites.