▎ 摘　　要

While the thermoelectric and photoconduction effects are crucial in pristine and low-doped graphene, the bolometric effect is known to dominate the photoresponse in biased graphene. Here, we present a detailed microscopic investigation of the photoresponse due to the bolometric effect in graphene. Based on the semiconductor Bloch equations, we investigate the time- and momentum-resolved carrier dynamics in graphene in the presence of a constant electric field under optical excitation. The magnitude of the bolometric effect is determined by the optically induced increase of temperature times the conductivity change. Investigating both factors independently, we reveal that the importance of the bolometric effect in the high-doping regime can be mostly ascribed to the latter showing a parabolic dependence on the doping.