• 文献标题:   2D Doping Layer for Flexible Transparent Conducting Graphene Electrodes with Low Sheet Resistance and High Stability
  • 文献类型:   Article
  • 作  者:   SEO YM, CHO HJ, JANG HS, JANG W, LIM JY, JANG Y, GU T, CHOI JY, WHANG D
  • 作者关键词:   doping, flexibility, graphene, stability, transparent conducting electrode
  • 出版物名称:   ADVANCED ELECTRONIC MATERIALS
  • ISSN:   2199-160X
  • 通讯作者地址:   Sungkyunkwan Univ
  • 被引频次:   4
  • DOI:   10.1002/aelm.201700622
  • 出版年:   2018

▎ 摘  要

Graphene, an ultrathin flexible material with high carrier mobility and transparency, is a promising candidate for flexible transparent conducting electrodes (TCEs). However, its resistance is too high for use as a TCE material by itself. Therefore, fabricating graphene with low sheet resistance and high stability is a significant challenge for practical applications of graphene TCEs. In this study, a 2D doping layer (DL) is proposed, which can stably dope graphene to develop a highly transparent graphene TCE with low sheet resistance. For this purpose, the 2D DL is prepared by immobilizing dopant molecules on transparent graphene oxide and simply stacking it with graphene enables efficient and stable charge transfer doping of the graphene. A TCE fabricated by alternately stacking the DL and graphene has a high optical transmittance of over 90% at a wavelength of 550 nm and a low sheet resistance of 50 Omega sq(-1). Furthermore, the sheet resistance shows an excellent thermal and mechanical stability with a change of only about 2% in a bending test of 20 000 cycles or at a high temperature of 220 degrees C. This result shows that stacking graphene with stable 2D DL is a promising approach for graphene-based next generation TCE.