• 文献标题:   Functionalized Single-Atom-Embedded Bilayer Graphene and Hexagonal Boron Nitride
  • 文献类型:   Article
  • 作  者:   TAKAHASHI K, TAKAHASHI L
  • 作者关键词:   graphene, boron nitride, single atom, functionalized graphene, bandgap, magnetic moment
  • 出版物名称:   ACS APPLIED ELECTRONIC MATERIALS
  • ISSN:   2637-6113
  • 通讯作者地址:   NIMS
  • 被引频次:   1
  • DOI:   10.1021/acsaelm.8b00036
  • 出版年:   2019

▎ 摘  要

Single-atom-embedded bilayer graphene and two-dimensional hexagonal boron nitride are proposed in terms of first-principles calculations. In particular, a series of 68 different single atoms are embedded within bilayer graphene and boron nitride. It is revealed that the magnetic moment and bandgap behave differently depending on the atomic element used for doping where it becomes possible to form a magnet, conductor, semiconductor, or insulator. The electronic and geometrical properties of bilayer graphene and boron nitride are, in principle, able to be tailored and tuned, thereby expanding on how two-dimensional materials are functionalized and designed.