▎ 摘　　要

Relations between a peak shift of Raman band and sheet resistance of graphene were investigated when graphene was doped with HNO3. Significant shifts of G band and 2D band as well as an intensity change of 2D band Were observed with graphene doping. The shift of Raman graphene bands with doping time exhibit a similar tendency with the change of sheet resistance. The position of 2D band of doped graphene was slowly returned to original undoped state when the doped graphene was stored in atmosphere. However, no peak shift was observed for doped graphene stored in vacuum.