• 文献标题:   Phonon renormalization in doped bilayer graphene
  • 文献类型:   Article
  • 作  者:   DAS A, CHAKRABORTY B, PISCANEC S, PISANA S, SOOD AK, FERRARI AC
  • 作者关键词:   conduction band, doping, graphene, phonon, raman spectra, valence band
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Indian Inst Sci
  • 被引频次:   187
  • DOI:   10.1103/PhysRevB.79.155417
  • 出版年:   2009

▎ 摘  要

We report phonon renormalization in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping as a result of the nonadiabatic Kohn anomaly at the Gamma point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This gives a change of slope in the variation of G peak position with doping which allows a direct measurement of the interlayer coupling strength.