• 文献标题:   Strain Engineering of Adsorbate Self-Assembly on Graphene for Band Gap Tuning
  • 文献类型:   Article
  • 作  者:   HILDEBRAND M, ABUALNAJA F, MAKWANA Z, HARRISON NM
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY C
  • ISSN:   1932-7447
  • 通讯作者地址:   Imperial Coll London
  • 被引频次:   5
  • DOI:   10.1021/acs.jpcc.8b09894
  • 出版年:   2019

▎ 摘  要

Recent interest in functionalized graphene has been motivated by the prospect of creating a two-dimensional semiconductor with a tunable band gap. Various approaches to band gap engineering have been made over the last decade, one of which is chemical functionalization. In this work, a predictive physical model of the self-assembly of halogenated carbene layers on graphene is suggested. Self-assembly of the adsorbed layer is found to be governed by a combination of the curvature of the graphene sheet, local distortions, as introduced by molecular adsorption, and short-range intermolecular repulsion. The thermodynamics of bidental covalent molecular adsorption and the resultant electronic structure are computed using density functional theory. It is predicted that a direct band gap is opened that is tunable by varying coverages and is dependent on the ripple amplitude. This provides a mechanism for the controlled engineering of graphene's electronic structure and thus its use in semiconductor technologies.