• 文献标题:   Raman Linewidth Contributions from Four-Phonon and Electron-Phonon Interactions in Graphene
  • 文献类型:   Article
  • 作  者:   HAN ZR, YANG XL, SULLIVAN SE, FENG TL, SHI L, LI W, RUAN XL
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:  
  • 被引频次:   9
  • DOI:   10.1103/PhysRevLett.128.045901
  • 出版年:   2022

▎ 摘  要

The Raman peak position and linewidth provide insight into phonon anharmonicity and electron-phonon interactions in materials. For monolayer graphene, prior first-principles calculations have yielded decreasing linewidth with increasing temperature, which is opposite to measurement results. Here, we explicitly consider four-phonon anharmonicity, phonon renormalization, and electron-phonon coupling, and find all to be important to successfully explain both the G peak frequency shift and linewidths in our suspended graphene sample over a wide temperature range. Four-phonon scattering contributes a prominent linewidth that increases with temperature, while temperature dependence from electron-phonon interactions is found to be reversed above a doping threshold (PLANCK CONSTANT OVER TWO PI omega(G)/2, with omega(G) being the frequency of the G phonon).