• 文献标题:   Realization of uniaxially strained, rolled-up monolayer CVD graphene on a Si platform via heteroepitaxial InGaAs/GaAs bilayers
  • 文献类型:   Article
  • 作  者:   MAO GM, WANG Q, CHAI ZE, LIU H, LIU K, REN XM
  • 作者关键词:  
  • 出版物名称:   RSC ADVANCES
  • ISSN:   2046-2069
  • 通讯作者地址:   Beijing Univ Posts Telecommun
  • 被引频次:   4
  • DOI:   10.1039/c6ra28482e
  • 出版年:   2017

▎ 摘  要

III-V semiconductor/graphene tubular structures with diameters of 4.5-5.4 mu m have been fabricated on a silicon platform by rolling up monolayer CVD graphene together with heteroepitaxial InGaAs/GaAs bilayers. Scanning electron microscopy (SEM) reveals that transferred graphene adheres to the wall of the Si-based InGaAs/GaAs microtube. Micro-Raman spectroscopy measurements show remarkable redshifts of the G and 2D bands of graphene after planar graphene totally rolls up, reflecting that rolled-up graphene is under uniaxial tensile strain and the strain originates from the rolled-up InGaAs/GaAs microtube. We also fabricated GaAs-based III-V semiconductor/graphene tubular structures with diameters of 3.7 and 4.7 mu m, respectively, thus finding an approach to graphene strain engineering (i.e., the Raman redshift and tensile strain of rolled-up graphene increase with the decrement of microtube diameter). Obviously, assembling strained graphene with III-V semiconductors in rolled-up form on a Si platform will bring about a variety of Si-based electronic and optical applications in the future.