• 文献标题:   Graphene Coupled with Silicon Quantum Dots for High-Performance Bulk-Silicon-Based Schottky-Junction Photodetectors
  • 文献类型:   Article
  • 作  者:   YU T, WANG F, XU Y, MA LL, PI XD, YANG DR
  • 作者关键词:  
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Zhejiang Univ
  • 被引频次:   89
  • DOI:   10.1002/adma.201506140
  • 出版年:   2016

▎ 摘  要

Graphene is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector. Si QDs cause an increase of the built-in potential of the graphene/Si Schottky junction while reducing the optical reflection of the photodetector. Both the electrical and optical contributions of Si QDs enable a superior performance of the photodetector.