• 文献标题:   Doping graphene films via chemically mediated charge transfer
  • 文献类型:   Article, Proceedings Paper
  • 作  者:   ISHIKAWA R, BANDO M, MORIMOTO Y, SANDHU A
  • 作者关键词:  
  • 出版物名称:   NANOSCALE RESEARCH LETTERS
  • ISSN:   1556-276X
  • 通讯作者地址:   Tokyo Inst Technol
  • 被引频次:   31
  • DOI:   10.1186/1556-276X-6-111
  • 出版年:   2011

▎ 摘  要

Transparent conductive films (TCFs) are critical components of a myriad of technologies including flat panel displays, light-emitting diodes, and solar cells. Graphene-based TCFs have attracted a lot of attention because of their high electrical conductivity, transparency, and low cost. Carrier doping of graphene would potentially improve the properties of graphene-based TCFs for practical industrial applications. However, controlling the carrier type and concentration of dopants in graphene films is challenging, especially for the synthesis of p-type films. In this article, a new method for doping graphene using the conjugated organic molecule, tetracyanoquinodimethane (TCNQ), is described. Notably, TCNQ is well known as a powerful electron accepter and is expected to favor electron transfer from graphene into TCNQ molecules, thereby leading to p-type doping of graphene films. Small amounts of TCNQ drastically improved the resistivity without degradation of optical transparency. Our carrier doping method based on charge transfer has a huge potential for graphene-based TCFs.