• 文献标题:   Comparing Graphene Growth on Cu(111) versus Oxidized Cu(111)
  • 文献类型:   Article
  • 作  者:   GOTTARDI S, MULLER K, BIGNARDI L, MORENOLOPEZ JC, PHAM TA, IVASHENKO O, YABLONSKIKH M, BARINOV A, BJORK J, RUDOLF P, STOHR M
  • 作者关键词:   graphene, copper oxide, dielectric, catalysi, electronic propertie, arpes, stm
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Univ Groningen
  • 被引频次:   63
  • DOI:   10.1021/nl5036463
  • 出版年:   2015

▎ 摘  要

The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer. Here, we compare graphene on a pure metallic to graphene on an oxidized copper surface in both cases grown by a single step CVD process under similar conditions. Remarkably, the growth on copper oxide, a high-k dielectric material, preserves the intrinsic properties of graphene; it is not doped and a linear dispersion is observed close to the Fermi energy. Density functional theory calculations give additional insight into the reaction processes and help explaining the catalytic activity of the copper oxide surface.