▎ 摘　　要

We report on the structural and electronic properties in the heterostructure of graphene/silicon/Ir(111). A (root 19 x root 19)R23.41 degrees superstructure is confirmed by low energy electron diffraction and scanning tunneling microscopy and its formation is ascribed to silicon intercalation at the interface between the graphene and the Ir(111) substrate. The dI/dV measurements indicate that the interaction between graphene and Ir is effectively decoupled after silicon intercalation. Raman spectroscopy also reveals the vibrational states of graphene, G peak and 2D peak, which further demonstrates that the silicon-buffered graphene behaves more like intrinsic graphene. (C) 2012 American Institute of Physics. [doi:10.1063/1.3687688]