• 文献标题:   Reversible fluorination of graphene: Evidence of a two-dimensional wide bandgap semiconductor
  • 文献类型:   Article
  • 作  者:   CHENG SH, ZOU K, OKINO F, GUTIERREZ HR, GUPTA A, SHEN N, EKLUND PC, SOFO JO, ZHU J
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   1098-0121
  • 通讯作者地址:   Penn State Univ
  • 被引频次:   298
  • DOI:   10.1103/PhysRevB.81.205435
  • 出版年:   2010

▎ 摘  要

We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G Omega at room temperature. Electron transport in graphene fluoride is well described by variable range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 k Omega at room temperature. Our approach provides a pathway to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.